火灾与撞击联合作用下钢管混凝土柱力学性能研究

为研究火灾高温与撞击联合作用下钢管混凝土柱的力学性能,基于ABAQUS建立了高温作用下考虑轴力影响的钢管混凝土柱侧向撞击有限元模型。首先,对高温与撞击联合作用下考虑轴力影响的钢管混凝土柱的破坏模式与受力全过程进行了分析,探讨了高温下钢管混凝土柱的抗撞性能与工作机理;其次,重点研究了受火时间、材料强度、含钢率以及撞击能量对抗撞性能的影响,并给出了相关设计建议。研究结果表明:高温与撞击联合作用下,钢管混凝土柱主要发生受弯破坏;受火15 min后,构件抗撞性能明显降低。轴压力对构件抗撞性能产生不利影响,轴压比从0增加到0.2,受火60 min构件抗撞性能下降了7.8%;混凝土强度对高温下钢管混凝土柱抗撞性能有显著影响,受火90 min后,混凝土强度由30 MPa增加到50 MPa,构件抗撞性能提高约85%;外钢管强度与含钢率对高温下抗撞性能影响不大。     

Ultra-low on-resistance high voltage (>600 V) SOI MOSFET with a reduced cell pitch

A low specific on-resistance (R S,on) silicon-on-insulator (SOI) trench MOSFET (metal-oxide-semiconductor-field-effect-transistor) with a reduced cell pitch is proposed.The lateral MOSFET features multiple trenches:two oxide trenches in the drift region and a trench gate extended to the buried oxide (BOX) (SOI MT MOSFET).Firstly,the oxide trenches increase the average electric field strength along the x direction due to lower permittivity of oxide compared with that of Si;secondly,the oxide trenches cause multiple-directional depletion,which improves the electric field distribution and enhances the reduced surface field (RESURF) effect in the SOI layer.Both of them result in a high breakdown voltage (BV).Thirdly,the oxide trenches cause the drift region to be folded in the vertical direction,leading to a shortened cell pitch and a reduced R S,on.Fourthly,the trench gate extended to the BOX further reduces R S,on,owing to the electron accumulation layer.The BV of the MT MOSFET increases from 309 V for a conventional SOI lateral double diffused metal-oxide semiconductor (LDMOS) to 632 V at the same half cell pitch of 21.5 μm,and R S,on decreases from 419 m · cm 2 to 36.6 m · cm 2.The proposed structure can also help to dramatically reduce the cell pitch at the same breakdown voltage.     

Radiation induced inter-device leakage degradation

The evolution of inter-device leakage current with total ionizing dose in transistors in 180 nm generation technologies is studied with an N-type poly-gate field device (PFD) that uses the shallow trench isolation as an effective gate oxide. The overall radiation response of these structures is determined by the trapped charge in the oxide. The impacts of different bias conditions during irradiation on the inter-device leakage current are studied for the first time in this work, which demonstrates that the worst condition is the same as traditional NMOS transistors. Moreover, the two-dimensional technology computer-aided design simulation is used to understand the bias dependence.     

钢管混凝土格构柱偏压承载能力分析的数值方法

采用泰勒级数作为分段插值函数,在考虑多个截面的平衡条件和紧箍效应钢管混凝土应力-应变关系基础上,提出了钢管混凝土格构柱弹塑性极限承载力数值方法,并编制了相应的计算程序。与现有的分段合成法相比,该方法考虑了剪力对柱变形的影响,不仅适用于两端偏心相等的偏压构件,而且适用于两端偏心不等的偏压构件的弹塑性极限承载力的计算。利用提出的计算方法和编制的程序对国内已有两端偏心相同的四肢钢管混凝土格构偏压长柱的试验结果进行了计算,并与现有规程进行了比较,结果表明:现有计算方法结果偏于保守,计算误差大,本文提出的计算结果与试验结果吻合良好。     

Bias dependence of a deep submicron NMOSFET response to total dose irradiation

Deep submicron n-channel metal-oxide-semiconductor field-effect transistors (NMOSFETs) with shallow trench isolation (STI) are exposed to ionizing dose radiation under different bias conditions.The total ionizing dose radiation induced subthreshold leakage current increase and the hump effect under four different irradiation bias conditions including the worst case (ON bias) for the transistors are discussed.The high electric fields at the corners are partly responsible for the subthreshold hump effect.Charge trapped in the isolation oxide,particularly at the Si/SiO 2 interface along the sidewalls of the trench oxide creates a leakage path,which becomes a dominant contributor to the offstate drain-to-source leakage current in the NMOSFET.Non-uniform charge distribution is introduced into a threedimensional (3D) simulation.Good agreement between experimental and simulation results is demonstrated.We find that the electric field distribution along with the STI sidewall is important for the radiation effect under different bias conditions.     

钢管混凝土纯压拱失稳临界荷载计算的等效柱法

在双重非线性有限元分析的基础上,进行了钢管混凝土纯压拱失稳临界荷载的简化计算方法——等效柱法的研究,提出了等效柱法中考虑矢跨比影响的稳定系数K₁ 以及考虑初始几何缺陷影响的折减系数K₂及其与现有规范相对应的计算公式。与有限元计算结果的对比表明,采用考虑矢跨比因素的稳定系数的等效柱法能较精确地估算钢管混凝土纯压拱的非线性失稳临界荷载,且计算精度受含钢率和钢材种类变化的影响较小。     

矩形中空夹层再生混凝土钢管短柱轴压试验研究

以截面形式、截面长宽比和混凝土类型为参数共设计了8根矩形中空夹层钢管混凝土试件,对其进行轴压实验并对其破坏形态、荷载-纵向应变关系曲线及外钢管横向应变发展规律进行分析。其中截面形式包括矩形套矩形和矩形套圆形两种,截面长宽比分别为1.25和1.5,混凝土类型包括普通混凝土和再生混凝土(再生粗骨料取代率为50%)两类。结果表明:对于截面形式相同的试件,长宽比较大者极限承载力更小,且其长边横向应变发展更快;对于长宽比相同的试件,矩形套矩形截面的试件长边横向应变发展比矩形套圆形截面的更快;混凝土类型对试件的极限承载力和破坏形态影响不大。最后运用有限元软件ABAQUS对8根短柱的轴压全过程进行模拟,并将有限元计算得到荷载-纵向应变曲线与实验实测曲线进行对比,两者吻合较好且互相验证。     

长期荷载作用下CFST界面粘结损伤试验研究

为考察在役钢管混凝土界面粘结性能与荷载作用时间的关系,以荷载作用时间段为基本参数,完成了7根圆钢管混凝土试件的推出试验.试验结果表明,钢管混凝土界面粘结力随荷载作用时间的延长而减小.根据试验结果,得出各个试件的荷载—滑移曲线.基于ANSI/ACI308-1992混凝土养护规程,得出每个试件在荷载作用下的混凝土徐变应变.从损伤力学的角度出发,定义界面损伤变量,推导了混凝土徐变应变与损伤的关系.通过回归得出含损伤变量的界面粘结—滑移本构关系.     

内爆炸下钢管混凝土结构变形与破坏的试验分析及数值模拟

钢管混凝土结构由于具有良好的力学性能和低经济成本而受到广泛应用,因此对它的研究很多,但对它在爆炸作用下尤其是内爆炸作用下的研究很少,故分析钢管混凝土结构在内爆炸下的变形与破坏具有重要意义.本文通过试验与数值模拟方法,分析了内爆炸下钢管混凝土结构在具有二条预制狭缝时的变形与破坏情形.结果表明,钢管变形主要发生在靠近狭缝处,变形大小随药量的增加而增大,最终导致钢管在狭缝两端出现约45°方向的裂纹,引起钢管混凝土剪切破坏.     

圆中空夹层钢管混凝土柱扭转实验研究

以名义含钢率、外钢管强度和空心率为主要变化参数,设计了6根圆中空夹层钢管混凝土和1根双层空钢管试件,对其进行了扭转试验研究。试验结果表明:在加载过程中,钢管和混凝土变形协调,共同工作;试件表现出很好的塑性性能;试件名义含钢率和外钢管强度越大,试件抗扭承载力也越大;空心率越大,试件抗扭承载力也越大;圆中空夹层钢管混凝土比双层空钢管抗扭承载力有明显的提高。同时用有限元方法对试件扭矩-转角全过程曲线进行计算,计算结果与试验结果吻合良好。